MICROELECTRONICS RESEARCH LABORATORY

DUBLIN CITY UNIVERSITY, DUBLIN 9, IRELAND

Recent Research Papers

Refereed Publications:

"Synchrotron x-ray topography studies of epitaxial lateral overgrowth of GaN on sapphire", P.J. McNally, T. Tuomi, R. Rantamäki, K. Jacobs, L. Considine, M. O'Hare, D. Lowney and A.N. Danilewsky, Mat. Res. Soc. Symp. Proc., 572, pp. 327-332 (1999).

"Epitaxial lateral overgrowth of gallium arsenide studied by synchrotron topography", R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz, P.J. McNally and A.N. Danilewsky, Mat. Res. Soc. Symp. Proc., 570, pp. 181-186 (1999).

"Synchrotron x-ray topographic analysis and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers", R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, J. Domagala, P.J. McNally and A.N. Danilewsky, J. Appl. Phys., 86, pp. 4298-4303 (1999).

Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron x-ray topography, electrical data and raman spectroscopy", P.J. McNally, J.W. Curley, M. Bolt, A. Reader, T. Tuomi, R, Rantamäki, A.N. Danilewsky and I. DeWolf, J. Materials Sci.:Materials in Electronics, 10, pp. 351-358 (1999).

"Synchrotron x-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth", R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz and P.J. McNally, J. Phys D: Appl. Phys., 32, pp. A114-A118 (1999).

"The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron x-ray topography", P.J. McNally, A.N. Danilewsky, J.W. Curley, A. Reader, R. Rantamäki, T. Tuomi, M. Bolt and M. Taskinen, Microelectron. Eng., 45, pp. 47-56 (1999).
"Grazing incidence synchrotron x-ray topography topography as a tool for denuded zone studies of silicon wafers", R. Rantamäki, T. Tuomi, P.J. McNally, J. Curley and A. Danilewsky, J. X-Ray Sci. & Technol., 8, pp. 159-169 (1998)

"The use of x-ray topography to map mechanical, thermomechanical and wire-bond strains in packaged integrated circuits", P.J. McNally, R. Rantamäki, J.W. Curley, T. Tuomi, A.N. Danilewsky and P.A.F. Herbert, Mat. Res. Soc. Symp. Proc., 505, pp. 241-247 (1998).

"Synchrotron X-ray topographic study of dislocations in GaAs detector crystals grown by vertical gradient freeze technique", T. Tuomi, M. Juvonen, R. Rantamäki, K. Hjelt, M. Bavdaz, S. Nenonen, M.A. Gagliardi, P.J. McNally, A.N. Danilewsky, E. Prieur, M. Taskinen and M. Tuominen, Mat. Res. Soc. Symp. Proc., 487, pp. 459-464 (1998).

"A simple one-dimensional model for the explanation of GaAs MESFET behavior", A. Baric and P.J. McNally, IEEE Trans. Education, 41, pp. 219-223 (1998).

"Thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts to n-type GaAs", M.S. Islam and P.J. McNally, Thin Solid Films, 320, pp. 253-259 (1998).

"A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni Ohmic contacts to n-GaAs, M.S. Islam and P.J. McNally, Microelectron. Eng., 40, pp. 35-42 (1998).

"An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography, P.J. McNally, J. Curley, A. Krier, Y. Mao, J. Richardson, T. Tuomi, M. Taskinen, R Rantamäki, E. Prieur and A. Danilewsky, Semicond. Sci. Technol., 13, pp. 345-349 (1998).

"Effects of metallization thickness on the thermal and long-term stability of Pd/Sn Ohmic contacts to n-GaAs", M.S. Islam and P.J. McNally, phys. stat. sol. (a), 165, pp. 417-426 (1998).

"Stress behaviour of reactively sputtered nitrogenated carbon films", J. Gilvarry, A.K.M.S. Chowdhury, M. Monclus, D.C. Cameron, P.J. McNally and T. Tuomi, Surface and Coatings Technology, 98 pp. 979-984 (1998).

"An examination of the crystalline quality of 200mm diameter silicon substrates using x-ray topography", J. Curley, P.J. McNally, A. Reader, T. Tuomi, M. Taskinen, R. Rantamäki, A. Danilewsky and B. Schropp, in Defects & Diffusion in Silicon Processing, eds. T.D. de la Rubbia, S. Coffa, P. Stolk and C.S. Rafferty, Mat. Res. Soc. Symp. Proc., 469, pp. 83-88 (1997).

"Synchrotron x-ray topographic study of strain in silicon wafers with integrated circuits", M. Karilahti, T. Tuomi, M. Taskinen, J. Tulkki, H. Lipsanen and P. McNally, Il Nuovo Cimento, 19D (2-4), pp. 181-184, (1997).

"The importance of the Pd to Sn ratio and of annealing cycles on the performance of Pd/Sn non-alloyed Ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Thin Solid Films, 292 (1-2), pp. 264-269 (1997).

"Effects of Au overlayers on the electrical and morphological characteristics of Pd/Sn ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Thin Solid Films, 290-291, pp. 417-421 (1996).

"Comparison of Pd/Sn and Pd/Sn/Au thin-film systems for device metallization", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F.Herbert, Proc. Mater. Res. Soc. Symp., 427, pp. 583-589 (1996).

"Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs P-HEMTs", P.J. McNally, T. Tuomi, P.A.F. Herbert, A. Baric, P Äyräs, IEEE Trans. Electron Devices, ED-43 (7), 1085-1091 (1996).

"Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes", P.J. McNally, P.A.F. Herbert, T. Tuomi, M. Karilahti and J.A. Higgins, J.Appl. Phys., 79 (11), pp. 8294-8297 (1996).

"Ohmic contacts to n-type GaAs made with Pd/Sn and Pd/Sn/Au metallization", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Proc. 8th IEEE Mediterranean Electrotechnical Conference (melecon '96), IEEE Cat. No. 96CH35884, pp. 385-388 (1996).

"Effects of annealing cycles on the electrical and morphological characteristics of Pd/Sn Ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Proc. 8th IEEE Mediterranean Electrotechnical Conference (melecon '96), IEEE Cat. No. 96CH35884, pp. 1294-1297 (1996).

"Piezoelectrically active defects and their impact on the performance of GaAs MESFETs", P.J. McNally, J.K. McCaffrey and A. Baric, Journal of Materials Processing Technology, 55, 3-4, pp. 303-310 (1995).

"Modelling the effects of piezoelectrically active defects and their impact on the threshold voltage of GaAs MESFETs", A. Baric, P.J. McNally and J.K McCaffrey, Mater. Sci. Eng. B, 28, pp. 248-252 (1994).

"Modelling and experimental analysis of the impact of process induced stress on the electrical performance of GaAs MESFETs", P.J. McNally, J.J. Rosenberg, T.N. Jackson and J.C. Ramirez, Solid-State Electron., 36, (11), pp. 1597-1612 (1993).

"The use of generalised models to explain the behaviour of Ohmic contacts to n-type GaAs", P.J. McNally, Solid-State Electron., 35, (12) pp. 1705-1708 (1992).

Presentations:

"X-Ray Topography Studies of Dislocation Distributions in Si during Proximity Rapid Thermal Diffusion", D. Lowney, P. J. McNally, M. Nolan, T. Perova, T. Tuomi, R. Rantamäkiand A.N. Danilewsky, HASYLAB Users Meeting, Hamburger Synchrotronstrahlungslabor, Deutsches Elektronen-Synchrotron (DESY), Hamburg, Germany, 28 January, 2000.

"X-ray topography of microdefects in silicon", T. Tuomi, R. Rantämaki, P. J. McNally, D. Lowney, P. Becker and A.N. Danilewsky, HASYLAB Users Meeting, Hamburger Synchrotronstrahlungslabor, Deutsches Elektronen-Synchrotron (DESY), Hamburg, Germany, 28 January, 2000.

"Modelling of harmonic contributions to non-symmetrical rf plasmas", M.N.A. Dewan, P.J. McNally and P.A.F. Herbert, Proc. Int. Conf. On Advances in Materials & Processing Technologies (AMPT '99), Vol. II, pp. 939-949, Dublin, Ireland, 3-6 August, 1999.

"Synchrotron x-ray topography applied to the monitoring of 0.25 mm CMOS integrated circuit fabrication", Patrick J. McNally [INVITED TALK], Scientific Results at Synchrotrons and FELs after 10 Years of EC Programmes for Access to Large Facilities, User Workshop, LURE, Orsay, Paris, 31 May-1 June, 1999.

"Semiconductor fabrication - synchrotron radiation x-ray topography as a monitor", Patrick J. McNally [INVITED TALK], IEE Irish Centre Public Lecture Trinity College Dublin, Ireland, 13 May, 1999.

"Synchrotron x-ray topography studies of epitaxial lateral overgrowth of GaN on sapphire", P.J. McNally, M. O'Hare, T. Tuomi, R. Rantamäki, K. Jacobs, L. Considine and A.N. Danilewsky, Materials Research Society Spring Meeting, San Francisco, CA, USA, 5-9 April, 1999.

"Epitaxial lateral overgrowth of gallium arsenide studied by synchrotron topography", R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz, P.J. McNally and A.N. Danilewsky, Materials Research Society Spring Meeting, San Francisco, CA, USA, 5-9 April, 1999.

"Reduzierung der Versetzungsdichte in weltraumgezüchtetem GaSb", A.N. Danilewsky, M.Schweizer, A.Cröll, St. Lauer, K.W.Benz, T.Tuomi, R.Rantamäki, P.McNally, J Curley, German Crystallographers Meeting (DGK), Leipzig, Germany, 7-10 March, 1999.

"Synchrotron x-ray topography (SXRT) studies of silicon wafers & MESA diodes", P.J. McNally, CERN Technical Report, Switzerland, available at http://www.cern.ch/, click R&D, then RD48, then ROSE Technical Reports (99-xx), 1999.

"X-ray topography study of epitaxial lateral overgrowth of GaN on sapphire", HASYLAB Users Meeting, Hamburger Synchrotronstrahlungslabor, Deutsches Elektronen-Synchrotron (DESY), Hamburg, Germany, 29 January, 1999.

"Monitoring of semiconductor integrated circuit fabrication using synchrotron radiation x-ray topography, P.J. McNally, EU Workshop on Research with Synchrotron Radiation at HASYLAB", Hamburger Synchrotronstrahlungslabor, Hamburg, Germany, 28 January, 1999.

"Evaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical data", [KEYNOTE ADDRESS] P.J. McNally, J.W. Curley, A. Reader, I. DeWolf, T. Tuomi and R. Rantamäki, 2^nd International Conf. On Materials for Microelectronics, Bordeaux, France, 14-15 September, 1998.

"Synchrotron x-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth", R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz and P.J. McNally, 4^th European Symposium on X-Ray Topography & High Resolution Diffraction (XTOP-98), Durham, U.K., 9-11 September, 1998.

"The use of RF fundamentals and harmonic I-V characteristics for semiconductor plasma process monitoring", M.N.A. Dewan, P.J. McNally and P.A.F. Herbert, Proc. XIV^th Europhysics Conference on Atomic & Molecular Physics of Ionized Gases (ESCAMPIG XIV), Vol 22H, pp. 378-379, Malahide, Ireland, 26-29 August, 1998.

"Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage", I. De Wolf, G. Groeseneken, H. E. Maes, M. Bolt, K. Barla, A. Reader and P. J. McNally, International Symposium for Testing and Failure Analysis (ISTFA 98), Dallas, Texas, USA, 15-19 November 1998.

"Mapping mechanical, thermomechanical & wire-bond strain fields in packaged integrated circuits using x-ray topography", P.J. McNally, R. Rantamäki, J.W. Curley, T. Tuomi, A.N. Danilewsky and P.A.F. Herbert, 1998 HASYLAB Users Meeting, HASYLAB, Deutsches Elektronen-Synchrotron (DESY), Hamburg, 30 Jan, 1998.

"The use of x-ray topography to map mechanical, thermomechanical and wire bond strain fields within packaged integrated circuits", P.J. McNally, J.W. Curley, T Tuomi, R. Rantamäki and A.N. Danilewsky, Materials Research Society Fall Meeting, Boston, USA, 1-5 December, 1997.

"Synchrotron x-ray topographic study of dislocations in GaAs detector crystals grown by vertical gradient freeze technique", T. Tuomi, M. Juvonen, R. Rantamäki, K. Hjelt, M. Bavdas, S. Nenonen, P.J. McNally, A.N. Danilewsky, E. Prieur, M. Taskinen and M. Tuominen, Materials Research Society Fall Meeting, Boston, USA, 1-5 December, 1997.

"Synchrotron x-ray topography applied to semiconductor device fabrication", Patrick J. McNally, IEE Irish Centre Public Lecture (and IEI West Region), NUI Galway, 20 November, 1997.

"On the correlation between crystal morphology and x-ray performance of a CdZnTe detector", M, Bavdaz, A. Peacock, S. Nenonen, M.A. Jantunen, T. Gagliardi, T. Tuomi, K.T. Hjelt, M. Juvonen, R. Rantämaki, S. Kraft, M. Wedowski, F. Scholze, G. Ulm, P.J. McNally, J. Curley and A.N. Danilewsky, 1997 SPIE International Symposium on Optical Science, Engineering and Instrumentation, San Diego, CA, USA, 27 July-1 August, 1997.

"Application of synchrotron x-ray topography to the evaluation of semiconductor device/material processing", Patrick J. McNally, Kristallographisches Institut, Albert Ludwigs Universität Freiburg, Germany, 13 May, 1997 (Invited Lecture).

"An examination of the crystalline quality of 200mm diameter silicon substrates using x-ray topography", J.W. Curley, P.J. McNally, A. Reader, T. Tuomi, M. Taskinen, R. Rantamäki, A. Danilewsky and B. Schropp, MRS Spring Meeting, San Francisco, U.S.A., 31 March- 4 April, 1997.

"Defects in GaAs crystals analysed by synchrotron x-ray topography", A.N. Danilewsky, A. Cröll, B. Schropp, T. Tuomi, M. Taskinen, R. Rantamäki, E. Prieur, P.J. McNally and J. Curley, Annual Meeting of German Association of Crystallography -DGK, Hamburg, Germany, 10 March, 1997.

"Defect recognition in natural minerals by synchrotron x-ray topography using conventional thin sections", A.N. Danilewsky, B. Schropp, S. Kek, P.M. Sachs, T. Tuomi, M. Taskinen, R. Rantamäki, P.J. McNally and J. Curley, Annual Meeting of German Association of Crystallography -DGK, Hamburg, Germany, 10 March, 1997.

"Stress effects in GaAs/AlGaAs heterojunction bipolar transistors", O. Bajdechi and P.J. McNally, International Semiconductor Conference (CAS), Sinaia, Romania, 9-12 October, 1996.

"Stress behaviour of reactively sputtered nitrogenated carbon films", J. Gilvarry, A.K.M.S. Chowdhury, M. Monclus, D.C. Cameron, P.J. McNally and T. Tuomi, 5th Int. Conf. on Plasma Surface Engineering, Garmisch-Partenkirchen, Germany, 9-13 September, 1996.

"Effects of Au overlayers on the electrical and morphological characteristics of Pd/Sn Ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, International Conference on Metallurgical Coatings and Thin Films (ICMCTF 1996), San Diego, U.S.A., 22-26 April, 1996.

"Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25mm and 0.35mm CMOS technology", P.J. McNally, A. Reader, T. Tuomi and P.A.F. Herbert, 3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP '96), Palermo, Italy, 22-24 April, 1996.

"Comparison of Pd/Sn and Pd/Sn/Au thin-film systems for device metallization", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, MRS Spring Meeting, San Francisco, U.S.A., 8-12 April, 1996.

"Synchrotron X-ray topography study of Si wafers for advanced 0.25mm CMOS technology", P.J. McNally, T. Tuomi, M. Taskinen, A.N. Danilewsky, P.A.F. Herbert and A. Reader, HASYLAB Users' Meeting, Hamburger Synchrotronstrahlungslabor, Hamburg, Germany, 26 January, 1996.

"Synchrotron X-ray topography study of Si wafers and device structures for advanced 0.25mm and 0.35mm CMOS technology", P.J. McNally, A. Reader, T. Tuomi and P.A.F. Herbert, 2nd EU ESPRIT SHAPE Characterisation Workshop, CNET, Grenoble, France, 10-11 January, 1996.

"Characterization of Pd/Sn Ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Proc. IEEE 1995 Workshop on High Performance Electron Devices for Microwave & Optoelectronic Applications (EDMO), pp. 26-31, King's College , London, U.K., 27 November, 1995.

"A novel Pd-based Ohmic contact system for n-type GaAs: a structural, morphological and electrical investigation", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, 6th European Conference on Applications of Surface and Interface Analysis (ECASIA '95), Montreux, Switzerland, 9-13 October, 1995, eds. H.J. Mathieu, B. Reihl and D. Briggs, pp.299-302, Wiley, 1996.

"Properties of Pd/Sn Ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Proceedings of the International Conference on Advances in Materials and Processing Technologies (AMPT '95), Dublin, Ireland, DCU Press, Vol. 1, pp. 40-49, 8-12 August, 1995.

"Palladium-based Ohmic contacts to n-type GaAs - a review of recent advances", M.S. Islam, P.J. McNally and D.C. Cameron, Proceedings of the International Conference on Advances in Materials and Processing Technologies (AMPT '95), Dublin, Ireland, DCU Press, Vol. 1, pp. 18-30, 8-12 August, 1995.

"GaAs electron mobility models", A. Baric and P. McNally, MIPRO, Opatija, Croatia, 23-26 May, 1995.

"Non-destructive characterisation of microelectronic fabrication by synchrotron x-ray topography", P.J. McNally, P.A.F. Herbert, T. Tuomi, P. Ayras, M. Karilahti and M. Tromby, Hamburger Synchrotronstrahlungslabor HASYLAB User's Meeting, Deutsches Elektronen-Synchrotron DESY, 27 January, Hamburg, Germany, 1995.
"Modelling the effects of piezoelectrically active defects and their impact on the threshold voltage of GaAs MESFETs", P.J. McNally, A. Baric and J.K McCaffrey, 2nd Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC '94), May 18-20, Parma, Italy, 1994.
"Competing Processes - a path to damage free plasma etching?", P.A.F. Herbert and P.J. McNally, 5th Annual Conference of the Irish Plasma & Beam Processing Group, Univ. of Ulster, Jordanstown, N. Ireland, 30-31 March, 1994.
"Piezoelectrically active defects and their impact on the performance of GaAs MESFETs", P.J. McNally, J.K. McCaffrey and A. Baric, Proc. of the International Conference on Advances in Materials and Processing Technologies (AMPT '93), August 24-27, Dublin City University, Dublin, Ireland, DCU Press, pp. 981-992, 1993.
"Modelling and experimental analysis of the impact of process induced stress on the electrical performance of GaAs MESFETs", P.J. McNally, J.J. Rosenberg, T.N. Jackson and J.C. Ramirez, Annual Meeting, Irish Optoelectronics Group, April 23-25, University College, Dublin, Ireland, 1992.

Last Revised: 15 June, 1998.

Contact Director of MRL (Dr. P. McNally)