MICROELECTRONICS
RESEARCH LABORATORY
MICROELECTRONICS GROUP, RESEARCH
INSTITUTE FOR NETWORKS & COMMUNICATIONS ENGINEERING (RINCE), DUBLIN CITY
UNIVERSITY, DUBLIN 9, IRELAND.
Refereed Publications:
o
“Structural and Compositional Evolution of Self-Assembled Germanium
Islands on Silicon (001) During High Growth Rate LPCVD”, Gabriela D.M.
Dilliway, Nicholas E.B. Cowern, Chris Jeynes, Lisa O’Reilly, Patrick J.
McNally, Darren M. Bagnall,accepted for publication, Mat. Res. Soc. Symp.
Proc., 2003.
o
“Stress characterization of device layers and the
underlying Si1-xGex virtual substrate with
high-resolution micro-Raman spectroscopy”, W.M. Chen, P.J. McNally, G.D.M.
Dilliway, J. Bonar, T. Tuomi and A.F.W. Willoughby, J. Mater. Sci: Mater. In
Electron., 14, pp. 455-458 (2003).
o
“Correlating integrated circuit process-induced strain
and defects against device yield and process control monitoring”, M. Karilahti,
T. Tuomi, R. Rantamäki, P.J. McNally and A.N. Danilewsky, J. Mater. Sci:
Mater. Electron., 14, pp. 445-449 (2003).
o
“Tilted-wing-induced stress distribution in epitaxial
lateral overgrown GaN”, W.M. Chen, P.J. McNally, J. Kanatharana, D. Lowney, K.
Jacobs, T. Tuomi, L. Knuuttila, J. Riikonen and J. Toivonen, J. Mater. Sci:
Mater. Electron., 14, pp. 283-286 (2003).
o
“Misfit dislocations in GaAsN/GaAs interface”, J.
Toivonen, T. Tuomi, J. Riikonen, L. Knuuttila, T. Hakkarainen, M. Sopanen, H.
Lipsanen, P.J. McNally, W. Chen and D. Lowney, J. Mater. Sci: Mater.
Electron., 14, pp. 267-270 (2003).
o
“Mapping of mechanical stresses in silicon substrates
due to lead-tin solder bump reflow process via synchrotron x-ray topography and
finite element modelling”, J. Kanatharana, J.J. Pérez-Camacho, T. Buckley, P.J.
McNally, T. Tuomi, M. O’Hare, D. Lowney, W. Chen, R. Rantamäki, L. Knuuttila
and J. Riikonen, J. Phys. D: Appl. Phys., 36, pp. A60-A64 (2003).
o
“Dislocation
analysis for heat-exchanger method grown sapphire with white beam synchrotron
X-ray topography”, W.M. Chen, P.J.
McNally, Yu.V. Shvyd’ko, T. Tuomi, A.N. Danilewsky and M. Lerche, J. Crystal Growth, 252 (1-3), pp. 113-119 (2003).
o “Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements”, M. Karilahti, T. Tuomi and P.J. McNally, Semicond. Sci. Technol., 18 (1) pp. 45-55 (2003).
o “Evaluation of mechanical stresses in silicon substrates due to lead–tin solder bumps via synchrotron X-ray topography and finite element modeling”, J. Kanatharana , J.J. Perez-Camacho , T. Buckley , P.J. McNally , T. Tuomi , A.N. Danilewsky , M. O’Hare , D. Lowney , W. Chen , R. Rantamaki , L. Knuuttila and J. Riikonen, Microelectron. Eng., 65, pp. 209-221 (2003).
o “Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring”, M.N.A. Dewan , P.J. McNally , T. Perova and P.A.F. Herbert, Microelectron. Eng., 65, pp. 25-46 (2003).
o “Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography” , D. Lowney, T.S. Perova, M. Nolan, P.J. McNally, R.A.Moore, H.S. Gamble, T. Tuomi, R.Rantamaki and A.N. Danilewsky, Semicond. Sci. Technol., 17 (10), pp. 1081-1089 (2002).
o “Determination of crystal misorientation in epitaxial lateral overgrowth of GaN”, W.M. Chen, P.J. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky, Z.R. Zytkiewicz, D. Lowney, J. Kanatharana, L. Knuuttila, J. Riikonen, J. Cryst. Growth, 243, pp. 94-102 (2002).
o
“Plasma modeling for a nonsymmetric capacitive
discharge driven by a nonsinusoidal radio frequency current”, M.N.A. Dewan,
P.J. McNally and P.A.F. Herbert, J. Appl. Phys., 91 (9), pp.
5604-5613 (2002).
o
“White beam synchrotron x-ray topography and x-ray
diffraction measurements of epitaxial lateral overgrowth of GaN”, W.M. Chen,
P.J. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky, D. Lowney, J. Kanatharana,
L. Knuuttila and J. Riikonen, Mat. Res. Soc. Symp. Proc., 693, pp. 141-146 (2002).
o “Total reflection x-ray topography
for the observation of misfit dislocation strain at the surface of a Si/Ge-Si
heterostructure”, Patrick J. McNally, G. Dilliway, J.M. Bonar, A. Willoughby,
T. Tuomi, R. Rantamäki, A.N. Danilewsky and D. Lowney, J. X-Ray Sci.
Technol., 9, pp. 121-130 (2001).
o
“Modeling of
harmonic contributions to non-symmetrical RF plasmas”, M.N.A. Dewan, P.J.
McNally and P.A.F. Herbert, J. Mater. Proc. Technol., 118, pp. 343-349 (2001).
o “Investigation of Mechanical Stresses in Underlying Silicon due to Lead-Tin Solder Bumps via Synchrotron X-Ray Topography and Finite Element Analysis”, J. Kanatharana, J.J. Pérez-Camacho, T. Buckley, P.J. McNally, T. Tuomi, A.N. Danilewsky, M. O’Hare, D. Lowney and W. Chen, accepted for publication, Mat. Res. Soc. Symp. Proc., 2001.
o
“Quality
assessment of sapphire wafers for x-ray crystal optics using white beam
synchrotron x-ray topography”, W.M. Chen, P.J. McNally, Yu. V. Shvydko, T.
Tuomi, M. Lerche, A.N. Danilewsky, J. Janatharana, D. Lowney, M. O’Hare, L.
Knuuttila, J. Riikonen and R. Rantamäki, phys. stat. sol. (a), 186
(3), pp. 365-371 (2001).
o
“Dynamical
diffraction imaging of voids in nearly perfect silicon”, T. Tuomi, R.
Rantamaki, P.J. McNally, D. Lowney, A.N. Danilewsky and P. Becker, J. Phys D:Appl. Phys., 34 (10A), pp. A133-A135 (2001).
o “Use of plasma impedance monitoring
for the determination of SF6 reactive ion etch process end points in
a SiO2/Si system”, M. N. A. Dewan, P. J. McNally, T. Perova and P.
A. F. Herbert, Mat. Res. Innovat., 5 (2), pp. 107-116 (2001).
o
“Mapping
of mechanical, thermomechanical and wire-bond strain fields in packaged Si
integrated circuits using synchrotron white beam x-ray topography”, Patrick J.
McNally, R. Rantamäki, T. Tuomi, A.N. Danilewsky, Donnacha Lowney, J.W. Curley
and P.A.F. Herbert, IEEE Trans. Comp.
Packag. Technol., 24 (1), pp.
76-83 (2001).
o
“Epitaxial
lateral overgrowth of GaN on sapphire – an examination of epitaxy quality using
synchrotron x-ray topography”, P.J. McNally, T. Tuomi, D. Lowney, K. Jacobs,
A.N. Danilewsky, R. Rantamäki, M. O’Hare and L. Considine, phys. stat. sol. (a), 185 (2), pp. 373-382 (2001).
o
“Examination
of the structural and optical failure of ultra bright LEDs under varying
degrees of electrical stress using synchrotron x-ray topography and optical
emission spectroscopy”, D. Lowney, P.J. McNally, M. O’Hare, P.A.F. Herbert, T.
Tuomi, R. Rantamäki, A.N. Danilewsky and M. Karilahti, J. Materials Sci.:Materials in Electronics, 12, pp. 249-253
(2001).
o
“Comparative
analysis of synchrotron x-ray transmission and reflection topography techniques
applied to epitaxial laterally overgrown GaAs layers”, R. Rantamäki, T. Tuomi,
Z.R. Zytkiewicz, P.J. McNally and A.N. Danilewsky, J. X-Ray Sci. & Technol., accepted for publication, 2001.
o
“Compact
DC model for submicron GaAs MESFETs including gate-source modulation effects”,
P.J. McNally and B. Daniels, Microelectronics
Journal, 32 (3), pp. 249-251
(2001).
o
“On
the use of total reflection X-ray topography for the observation of misfit
dislocation strain at the surface of a Si/Ge-Si heterostructure”, Patrick J.
McNally, G. Dilliway, J.M Bonar, A. Willoughby, T. Tuomi, R Rantamäki, A.N.
Danilewsky and D. Lowney, Appl.
Phys. Lett., 77 (11), pp.
1644-1646 (2000).
o
"Observation
of Misfit Dislocation Strain-Induced Surface Features for a Si/Ge-Si
Heterostructure Using Total Reflection X-Ray Topography", Patrick J.
McNally, G. Dilliway, J.M Bonar, A. Willoughby, T. Tuomi, R.
Rantamäki , A.N. Danilewsky and D. Lowney, phys. stat. sol. (a), 180,
R1-R3 (2000).
o
"Non-alloyed
Pd/Sn and Pd/Sn/Au ohmic contacts for GaAs MESFETs: technology and
performance", M.S. Islam, P.J. McNally, A.H.M. Zahirul Alam and M.Q. Huda,
Solid-State Electronics, 44, pp. 655-661 (2000).
o
"Synchrotron
x-ray topography studies of epitaxial lateral overgrowth of GaN on
sapphire", P.J. McNally, T. Tuomi, R. Rantamäki, K. Jacobs, L. Considine,
M. O'Hare, D. Lowney and A.N. Danilewsky, Mat. Res. Soc. Symp. Proc., 572,
pp. 327-332 (1999).
o
"Epitaxial
lateral overgrowth of gallium arsenide studied by synchrotron topography",
R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz, P.J. McNally and A.N.
Danilewsky, Mat. Res. Soc. Symp. Proc., 570, pp. 181-186 (1999).
o
"Synchrotron
x-ray topographic analysis and high-resolution diffraction analysis of
mask-induced strain in epitaxial laterally overgrown GaAs layers", R.
Rantamäki, T. Tuomi, Z.R. Zytkiewicz, J. Domagala, P.J. McNally and A.N.
Danilewsky, J. Appl. Phys., 86, pp. 4298-4303 (1999).
o
Monitoring
of stress reduction in shallow trench isolation CMOS structures via synchrotron
x-ray topography, electrical data and raman spectroscopy", P.J. McNally,
J.W. Curley, M. Bolt, A. Reader, T. Tuomi, R, Rantamäki, A.N. Danilewsky and I.
DeWolf, J. Materials Sci.:Materials in Electronics, 10, pp.
351-358 (1999).
o
"Synchrotron
x-ray topography analysis of GaAs layers grown on GaAs substrates by liquid
phase epitaxial lateral overgrowth", R. Rantamäki, T. Tuomi, Z.R.
Zytkiewicz, D. Dobosz and P.J. McNally, J. Phys D: Appl. Phys., 32,
pp. A114-A118 (1999).
o
"The
quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology
monitored using synchrotron x-ray topography", P.J. McNally, A.N.
Danilewsky, J.W. Curley, A. Reader, R. Rantamäki, T. Tuomi, M. Bolt and M. Taskinen,
Microelectron. Eng., 45, pp. 47-56 (1999).
o
"Grazing
incidence synchrotron x-ray topography topography as a tool for denuded zone
studies of silicon wafers", R. Rantamäki, T. Tuomi, P.J. McNally, J.
Curley and A. Danilewsky, J. X-Ray Sci. & Technol., 8, pp.
159-169 (1998).
o
"The
use of x-ray topography to map mechanical, thermomechanical and wire-bond
strains in packaged integrated circuits", P.J. McNally, R. Rantamäki, J.W.
Curley, T. Tuomi, A.N. Danilewsky and P.A.F. Herbert, Mat. Res. Soc. Symp.
Proc., 505, pp. 241-247 (1998).
o
"Synchrotron
X-ray topographic study of dislocations in GaAs detector crystals grown by
vertical gradient freeze technique", T. Tuomi, M. Juvonen, R. Rantamäki,
K. Hjelt, M. Bavdaz, S. Nenonen, M.A. Gagliardi, P.J. McNally, A.N. Danilewsky,
E. Prieur, M. Taskinen and M. Tuominen, Mat. Res. Soc. Symp. Proc., 487,
pp. 459-464 (1998).
o
"A
simple one-dimensional model for the explanation of GaAs MESFET behavior",
A. Baric and P.J. McNally, IEEE Trans. Education, 41, pp. 219-223
(1998).
o
"Thermally
stable Pd/Sn and Pd/Sn/Au ohmic contacts to n-type GaAs", M.S. Islam and
P.J. McNally, Thin Solid Films, 320, pp. 253-259 (1998).
o
"A
comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni Ohmic
contacts to n-GaAs, M.S. Islam and P.J. McNally, Microelectron. Eng., 40,
pp. 35-42 (1998).
o
"An
evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared
devices using synchrotron x-ray topography, P.J. McNally, J. Curley, A. Krier,
Y. Mao, J. Richardson, T. Tuomi, M. Taskinen, R Rantamäki, E. Prieur and A.
Danilewsky, Semicond. Sci. Technol., 13, pp. 345-349 (1998).
o
"Effects
of metallization thickness on the thermal and long-term stability of Pd/Sn
Ohmic contacts to n-GaAs", M.S. Islam and P.J. McNally, phys. stat. sol.
(a), 165, pp. 417-426 (1998).
o
"Stress
behaviour of reactively sputtered nitrogenated carbon films", J. Gilvarry,
A.K.M.S. Chowdhury, M. Monclus, D.C. Cameron, P.J. McNally and T. Tuomi, Surface
and Coatings Technology, 98 pp. 979-984 (1998).
o
"An
examination of the crystalline quality of 200mm diameter silicon substrates
using x-ray topography", J. Curley, P.J. McNally, A. Reader, T. Tuomi, M.
Taskinen, R. Rantamäki, A. Danilewsky and B. Schropp, in Defects &
Diffusion in Silicon Processing, eds. T.D. de la Rubbia, S. Coffa, P. Stolk
and C.S. Rafferty, Mat. Res. Soc. Symp. Proc., 469, pp. 83-88
(1997).
o
"Synchrotron
x-ray topographic study of strain in silicon wafers with integrated
circuits", M. Karilahti, T. Tuomi, M. Taskinen, J. Tulkki, H. Lipsanen and
P. McNally, Il Nuovo Cimento, 19D (2-4), pp. 181-184, (1997).
o
"The
importance of the Pd to Sn ratio and of annealing cycles on the performance of
Pd/Sn non-alloyed Ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally,
D.C. Cameron and P.A.F. Herbert, Thin Solid Films, 292 (1-2), pp.
264-269 (1997).
o
"Effects
of Au overlayers on the electrical and morphological characteristics of Pd/Sn
ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and
P.A.F. Herbert, Thin Solid Films, 290-291, pp. 417-421 (1996).
o
"Comparison
of Pd/Sn and Pd/Sn/Au thin-film systems for device metallization", M.S.
Islam, P.J. McNally, D.C. Cameron and P.A.F.Herbert, Proc. Mater. Res. Soc.
Symp., 427, pp. 583-589 (1996).
o
"Synchrotron
X-ray topographic analysis of the impact of processing steps on the fabrication
of AlGaAs/InGaAs P-HEMTs", P.J. McNally, T. Tuomi, P.A.F. Herbert, A.
Baric, P Äyräs, IEEE Trans. Electron Devices, ED-43 (7),
1085-1091 (1996).
o
"Analysis
of the impact of dislocation distribution on the breakdown voltage of
GaAs-based power varactor diodes", P.J. McNally, P.A.F. Herbert, T. Tuomi,
M. Karilahti and J.A. Higgins, J.Appl. Phys., 79 (11), pp.
8294-8297 (1996).
o
"Ohmic
contacts to n-type GaAs made with Pd/Sn and Pd/Sn/Au metallization", M.S.
Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Proc. 8th IEEE
Mediterranean Electrotechnical Conference (melecon '96), IEEE Cat. No.
96CH35884, pp. 385-388 (1996).
o
"Effects
of annealing cycles on the electrical and morphological characteristics of
Pd/Sn Ohmic contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron
and P.A.F. Herbert, Proc. 8th IEEE Mediterranean Electrotechnical Conference
(melecon '96), IEEE Cat. No. 96CH35884, pp. 1294-1297 (1996).
o
"Piezoelectrically
active defects and their impact on the performance of GaAs MESFETs", P.J.
McNally, J.K. McCaffrey and A. Baric, Journal of Materials Processing
Technology, 55, 3-4, pp. 303-310 (1995).
o
"Modelling
the effects of piezoelectrically active defects and their impact on the
threshold voltage of GaAs MESFETs", A. Baric, P.J. McNally and J.K
McCaffrey, Mater. Sci. Eng. B, 28, pp. 248-252 (1994).
o
"Modelling
and experimental analysis of the impact of process induced stress on the
electrical performance of GaAs MESFETs", P.J. McNally, J.J. Rosenberg,
T.N. Jackson and J.C. Ramirez, Solid-State Electron., 36, (11),
pp. 1597-1612 (1993).
o
"The
use of generalised models to explain the behaviour of Ohmic contacts to n-type
GaAs", P.J. McNally, Solid-State Electron., 35, (12) pp.
1705-1708 (1992).
Presentations:
o
Synchrotron
X-Ray Topography at ANKA Research Centre Karlsruhe, Germany, A.N. Danilewsky ,
P. McNally , L. O'Reilly , T. Tuomi , A. Lankinen and R. Simon, 2nd ANKA
Users Meeting, Karlsruhe, Germany, 15-16 September 2003
o
“Infrared photoluminescence imaging of infrared materials“, N.V.
Sochinskii, V. N. Babentsov , P. J. McNally , A. Dundee , C. Corsi, Advanced
Infrared Technology & Applications (AITA 2003), Pisa, Italy, 9-11
September, 2003.
o
“Structural and Compositional Evolution of
Self-Assembled Germanium Islands on Silicon (001) During High Growth Rate
LPCVD”, Gabriela D.M. Dilliway, Nicholas E.B. Cowern, Chris Jeynes, Lisa
O’Reilly, Patrick J. McNally and Darren M. Bagnall, Session P9.25,
Synthesis Assembly and Application of Nanobuilding Blocks, Materials
Research Society Spring Meeting, San Francisco, USA, 21-25 April, 2003.
o “Effects
of nitrogen doping on voids in perfect silicon”, T. Tuomi, P.J. McNally and P. Becker, Hamburger Synchrotronstrahlungslabor am Deutschen
Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1, pp. 245-246, 2002.
o “Epitaxial lateral overgrowth of indium phosphide
on silicon, M. Karilahti, T. Tuomi, Z.R. Zytkiewicz and P.J. McNally, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp. 253-254, 2002.
o Evaluation of electroless copper interconnect
induced strain in Si IC processing using white beam synchrotron x-ray
topography, micro-Raman spectroscopy and finite element modelling”, J.
Kanatharana, P.J. McNally, T. Tuomi, B.H.W. Toh, D. McNeill, W.M Chen, J.
Riikonen, L. Knuuttila and J. Pérez-Camacho, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp. 253-254, 2002.
o
“Mapping of
threading dislocation pile-up in Si1-xGex virtual
substrates with low angle grazing incidence x-ray topography”, W.M. Chen,
G.D.M. Dilliway, P.J. McNally, T. Tuomi, A.F.W. Willoughby, J. Bonar, L.
Knuuttila, J. Riikonen and J. Toivonen, Hamburger Synchrotronstrahlungslabor am
Deutschen Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1, pp.
331-332, 2002.
“Strain & defects in semiconductors - the use of complementary techniques: synchrotron X-ray topography and micro-Raman spectroscopy”, Patrick J. McNally, University of Surrey, 25 July, 2002 [INVITED PAPER].
o
“Tilted wing induced stress distribution in epitaxial
overgrown GaN”, W.M Chen, P.J. McNally, J. Kanatharana, D. Lowney, K. Jacobs,
T. Tuomi, L. Knuuttila, J. Riikonen and J. Toivonen, 4th Int.
Conf. on Materials for Microelectronics & Nanoengineering (MFMN2002),
Helsinki, Finland, June, 2002.
o
“Stress characterization of device layers and the
underlying Si1-xGex virtual substrate with high
resolution micro-Raman spectroscopy”, W.M. Chen, P.J. McNally, A.F.W.
Willoughby and T. Tuomi, , 4th Int. Conf. on Materials for
Microelectronics & Nanoengineering (MFMN2002), Helsinki, Finland, June,
2002 [3rd placed best poster].
o
“Wing tilt features in white beam synchrotron X-ray
topographs of epitaxial lateral overgrown GaN”, W.M. Chen, P. J.
McNally, K. Jacobs, T. Tuomi, A. N. Danilewsky, D. Lowney, J. Kanatharana, L.
Knuuttila and J. Riikonen, Hamburger Synchrotronstrahlungslabor am Deutschen
Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1, pp. 865-6,
2001.
o
“White beam synchrotron x-ray topography studies of
copper interconnect induced strain in Si IC processing”, J.
Kanatharana, P.J. McNally, T. Tuomi, B.H.W. Toh, D. McNeill,W.M. Chen, J.
Riikonen, L. Knuuttila and J.J. Pérez-Camacho, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp. 861-2, 2001.
o
“Dislocations
in GaAs grown by vapour pressure controlled Czochralski technique”, T. Tuomi,
L. Knuuttila, J. Riikonen, P. Rudolph, M. Neubert, P. J. McNally, W. Chen, J.
Kanatharana, Hamburger Synchrotronstrahlungslabor am Deutschen
Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1, pp. 839-40,
2001.
o
“Diffraction
imaging of microdefects in Czochralski silicon”, T. Tuomi, P. J. McNally, D. Lowney
and P. Becker, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp.
835-6, 2001.
o
“Synchrotron
x-ray topography of VCz GaAs crystals”, P. Rudolph, M. Neubert, T. Tuomi, L.
Knuuttila, P.J. McNally, W. Chen, J. Kanathatana and A.N. Danilewsky, 13th Int. Conf. On Crystal Growth
(ICCG-13), Kyoto, Japan, 30 July-4 August, 2001.
o
“Application
of x-ray diffracttion and topography techniques for studies of strain in
laterally overgrown epitaxial structures”, Z.R. Zytkiewicz, J. Domagala, R.
Rantamäki, T. Tuomi, P.J. McNally and A.N. Danilewsky, 6th Polish
Conf. on Crystal Growth, Abstract, Poznan, Poland, May 2001.
o
“Investigation
of mechanical stresses in underlying silicon due to lead-tin solder bumps via
synchrotron x-ray topography and finite element analysis”, J. Kanatharana, J.J.
Pérez-Camacho, T. Buckley, P.J. McNally, T. Tuomi, A.N. Danilewsky, M. O’Hare,
D. Lowney and W. Chen, Microelectronics
& Microsystem Packaging Symposium N, Materials Research Society Spring
Meeting, San Francisco, CA, U.S.A., 16-20 April, 2001.
o
“Wide
bandgap semiconductors: applications and implications”, Future Trends in High Speed Semiconductors, Institution of
Engineers of Ireland/Institute of Electrical & Electronic Engineers Expert
Panel Session, 22 Clyde Road, Dublin, Ireland, 28 March, 2001 [INVITED TALK].
o
“White
beam synchrotron x-ray topography studies of Pb/Sn ball grid array induced
strain in Si substrates, J. Kanatharana, P.J. McNally, J.J. Perez-Camacho, T.
Tuomi, A.N. Danilewsky and M O’Hare, Hamburger Synchrotronstrahlungslabor
HASYLAB Users Meeting, 26 Jan, 2001.
o
“Defects in GaInNAs quantum dot layers”, T. Tuomi, P.
Pohjola, J. Riikonen, L. Knuuttila, M. Sopanen, P. J. McNally, J. Kanatharana,
W. Chen, D. Lowney and A. N. Danilewsky, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp. 851-2, 2000.
o
“Dynamical Diffraction Imaging of Voids in Extremely
Pure and Perfect Silicon”, T.Tuomi, R. Rantamäki, P. J. McNally, D. Lowney, A.
N. Danilewsky and P. Becker, Hamburger Synchrotronstrahlungslabor am
Deutschen Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1, pp.
857-8, 2000.
o
“Epitaxial growth of GaAs on silicon-on-insulator”, J.
Riikonen, L. Knuuttila, T.Tuomi, H. Lipsanen, P. J. McNally, J. Kanatharana, W.
Chen, D. Lowney and A. N. Danilewsky, Hamburger Synchrotronstrahlungslabor
am Deutschen Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1,
pp. 859-860, 2000.
o
“Growth and Defects of GaAsN layers on GaAs”, J.
Toivonen, T.Tuomi, J. Riikonen, L. Knuuttila, R. Rantamäki, M. Sopanen, H.
Lipsanen, P. J. McNally, J.
Kanatharana, W. Chen and D. Lowney, Hamburger Synchrotronstrahlungslabor am
Deutschen Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1, pp.
861-2, 2000.
o
“Structural and Optical Failure Mechanisms of IC LEDs”,
D. Lowney, P.J. McNally, M. O’Hare and T. Herbert, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp. 879-880, 2000.
o
“SXRT Evaluation of Sapphire Wafer Quality Used for
Bragg Backscattering Mirrors, W.M. Chen, P, J. McNally, Yu.V. Shvyd’ko, M.
Lerche, T. Tuomi, A. N. Danilewsky, J. Kanatharana, D. Lowney, M. O'Hare, L.
Knuuttila, J. Riikonen and R. Rantamäki, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp. 887-8, 2000.
o
“White Beam Synchrotron X-Ray Topography Studies of
Pb/Sn Ball Grid Array Induced Strain in Si Substrate” J. Kanatharana, P.J.
McNally, J.J. Pérez-Camacho , T. Tuomi, A.N. Danilewsky, M. O’Hare, D. Lowney
and W. Chen, Hamburger Synchrotronstrahlungslabor am Deutschen
Elektronen-Synchtotron (HASYLAB-DESY) Jahresbericht, Vol. 1, pp. 895-6,
2000.
o
“Characterisation of Diamond Crystals for use at the
PETRA Beamline”, D. Lowney , B. Adams , H. Franz and P.J. McNally, Hamburger
Synchrotronstrahlungslabor am Deutschen Elektronen-Synchtotron (HASYLAB-DESY)
Jahresbericht, Vol. 1, pp. 989-990, 2000.
o
“Failure
analysis of LED arrays using white beam synchrotron x-ray topography”, D.
Lowney, P.J. McNally, M. O’Hare, P.A.F. Herbert, T. Tuomi, R. Rantamäki, M.
Karilahti and A.N. Danilewsky, Proc. 3rd Int. Conf. on Materials for
Microelectronics (MFM2000), pp. 37-41, ISBN: 1-86125-129-7, Dublin Castle,
Ireland, 16-17 October, 2000.
o “Visualisation and finite element modelling of strain fields in silicon due to integrated circuit metallisation”, M. O’Hare, P.J. McNally, D. Lowney, T. Tuomi, R. Rantamäki and A.N. Danilewsky, Proc. 3rd Int. Conf. on Materials for Microelectronics (MFM2000), pp. 89-92, ISBN: 1-86125-129-7, Dublin Castle, Ireland, 16-17 October, 2000.
o “Synchrotron x-ray topography and micro-Raman spectroscopy of boron doped silicon wafer using rapid thermal diffusion”, M. Nolan, D. Lowney, P.J. McNally, T.S. Perova, A. Moore, H. Gamble, T. Tuomi, R. Rantamaki and A.N. Danilewsky, Proc. 3rd Int. Conf. on Materials for Microelectronics (MFM2000), pp. 147-150, ISBN: 1-86125-129-7, Dublin Castle, Ireland, 16-17 October, 2000.
o
"Dynamical diffraction imaging of microdefects in
silicon", T. Tuomi, R. Rantamäki, P.J. McNally, A.N. Danilewsky and P.
Becker, 5th Biennial Conference on High Resolution X-ray
Diffraction and Topography (X-TOP 2000), Ustroń-Jaszowiec, Poland, 13-15
September, 2000.
o “Bragg backscattering mirrors for
x-rays and Mössbauer radiation”, Y.V. Shvyd’ko, E. Gerdau, M. Gerkan, M. Lucht,
M. Lerche, H.D. Rüter, H.C. Wille, P. McNally, W. Chen, E. Alp, H. Sinn, J.
Sutter, A. Alatas and T. Tuomi, 7th Int.Conf. on Synchrotron Radiation
Instrumentation, Berlin, Germany, August 21-25, 2000.
o "X-Ray Topography Studies of
Dislocation Distributions in Si during Proximity Rapid Thermal Diffusion",
D. Lowney, P. J. McNally, M. Nolan, T. Perova, T. Tuomi, R. Rantamäkiand A.N. Danilewsky,
HASYLAB Users Meeting, Hamburger Synchrotronstrahlungslabor, Deutsches
Elektronen-Synchrotron (DESY), Hamburg, Germany, 28 January, 2000.
o "X-ray topography of
microdefects in silicon", T. Tuomi, R. Rantämaki, P. J. McNally, D.
Lowney, P. Becker and A.N. Danilewsky, HASYLAB Users Meeting, Hamburger
Synchrotronstrahlungslabor, Deutsches Elektronen-Synchrotron (DESY), Hamburg,
Germany, 28 January, 2000.
o "Modelling of harmonic
contributions to non-symmetrical rf plasmas", M.N.A. Dewan, P.J. McNally and
P.A.F. Herbert, Proc. Int. Conf. On Advances in Materials & Processing
Technologies (AMPT '99), Vol. II, pp. 939-949, Dublin, Ireland, 3-6 August,
1999.
o "Synchrotron x-ray topography
applied to the monitoring of 0.25 mm CMOS integrated circuit fabrication", Patrick J. McNally [INVITED
TALK], Scientific Results at Synchrotrons and FELs after 10 Years of EC
Programmes for Access to Large Facilities, User Workshop, LURE, Orsay, Paris,
31 May-1 June, 1999.
o "Semiconductor fabrication -
synchrotron radiation x-ray topography as a monitor", Patrick J. McNally [INVITED
TALK], IEE Irish Centre Public Lecture Trinity College Dublin, Ireland, 13
May, 1999.
o "Synchrotron x-ray topography
studies of epitaxial lateral overgrowth of GaN on sapphire", P.J. McNally,
M. O'Hare, T. Tuomi, R. Rantamäki, K. Jacobs, L. Considine and A.N. Danilewsky,
Materials Research Society Spring Meeting, San Francisco, CA, USA, 5-9 April,
1999.
o "Epitaxial lateral overgrowth
of gallium arsenide studied by synchrotron topography", R. Rantamäki, T.
Tuomi, Z.R. Zytkiewicz, D. Dobosz, P.J. McNally and A.N. Danilewsky, Materials
Research Society Spring Meeting, San Francisco, CA, USA, 5-9 April, 1999.
o "Reduzierung der
Versetzungsdichte in weltraumgezüchtetem GaSb", A.N. Danilewsky,
M.Schweizer, A.Cröll, St. Lauer, K.W.Benz, T.Tuomi, R.Rantamäki, P.McNally, J
Curley, German Crystallographers Meeting (DGK), Leipzig, Germany, 7-10 March,
1999.
o "Synchrotron x-ray topography
(SXRT) studies of silicon wafers & MESA diodes", P.J. McNally, CERN
Technical Report, Switzerland, available at http://www.cern.ch/, click R&D,
then RD48, then ROSE Technical Reports (99-xx), 1999.
o "X-ray topography study of
epitaxial lateral overgrowth of GaN on sapphire", HASYLAB Users Meeting,
Hamburger Synchrotronstrahlungslabor, Deutsches Elektronen-Synchrotron (DESY),
Hamburg, Germany, 29 January, 1999.
o "Monitoring of semiconductor
integrated circuit fabrication using synchrotron radiation x-ray topography,
P.J. McNally, EU Workshop on Research with Synchrotron Radiation at HASYLAB",
Hamburger Synchrotronstrahlungslabor, Hamburg, Germany, 28 January, 1999.
o "Evaluation of stress reduction
in shallow trench isolation CMOS structures via synchrotron X-ray topography,
Raman spectroscopy and electrical data", [KEYNOTE ADDRESS] P.J. McNally,
J.W. Curley, A. Reader, I. DeWolf, T. Tuomi and R. Rantamäki, 2nd
International Conf. On Materials for Microelectronics, Bordeaux, France, 14-15
September, 1998.
o "Synchrotron x-ray topography
analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial
lateral overgrowth", R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz
and P.J. McNally, 4th European Symposium on X-Ray Topography &
High Resolution Diffraction (XTOP-98), Durham, U.K., 9-11 September, 1998.
o "The use of RF fundamentals and
harmonic I-V characteristics for semiconductor plasma process monitoring",
M.N.A. Dewan, P.J. McNally and P.A.F. Herbert, Proc. XIVth
Europhysics Conference on Atomic & Molecular Physics of Ionized Gases
(ESCAMPIG XIV), Vol 22H, pp. 378-379, Malahide, Ireland, 26-29 August, 1998.
o "Micro-Raman spectroscopy
evaluation of the local mechanical stress in shallow trench isolation CMOS
structures: correlation with defect generation and diode leakage", I. De
Wolf, G. Groeseneken, H. E. Maes, M. Bolt, K. Barla, A. Reader and P. J.
McNally, International Symposium for Testing and Failure Analysis (ISTFA 98),
Dallas, Texas, USA, 15-19 November 1998.
o "Mapping mechanical,
thermomechanical & wire-bond strain fields in packaged integrated circuits
using x-ray topography", P.J. McNally, R. Rantamäki, J.W. Curley, T.
Tuomi, A.N. Danilewsky and P.A.F. Herbert, 1998 HASYLAB Users Meeting, HASYLAB,
Deutsches Elektronen-Synchrotron (DESY), Hamburg, 30 Jan, 1998.
o "The use of x-ray topography to
map mechanical, thermomechanical and wire bond strain fields within packaged
integrated circuits", P.J. McNally, J.W. Curley, T Tuomi, R. Rantamäki and
A.N. Danilewsky, Materials Research Society Fall Meeting, Boston, USA, 1-5
December, 1997.
o "Synchrotron x-ray topographic
study of dislocations in GaAs detector crystals grown by vertical gradient
freeze technique", T. Tuomi, M. Juvonen, R. Rantamäki, K. Hjelt, M.
Bavdas, S. Nenonen, P.J. McNally, A.N. Danilewsky, E. Prieur, M. Taskinen and
M. Tuominen, Materials Research Society Fall Meeting, Boston, USA, 1-5
December, 1997.
o "Synchrotron x-ray topography
applied to semiconductor device fabrication", Patrick J. McNally, IEE
Irish Centre Public Lecture (and IEI West Region), NUI Galway, 20 November,
1997.
o "On the correlation between
crystal morphology and x-ray performance of a CdZnTe detector", M, Bavdaz,
A. Peacock, S. Nenonen, M.A. Jantunen, T. Gagliardi, T. Tuomi, K.T. Hjelt, M.
Juvonen, R. Rantämaki, S. Kraft, M. Wedowski, F. Scholze, G. Ulm, P.J. McNally,
J. Curley and A.N. Danilewsky, 1997 SPIE International Symposium on Optical
Science, Engineering and Instrumentation, San Diego, CA, USA, 27 July-1 August,
1997.
o "Application of synchrotron
x-ray topography to the evaluation of semiconductor device/material
processing", Patrick J. McNally, Kristallographisches Institut, Albert
Ludwigs Universität Freiburg, Germany, 13 May, 1997 (Invited Lecture).
o "An examination of the
crystalline quality of 200mm diameter silicon substrates using x-ray
topography", J.W. Curley, P.J. McNally, A. Reader, T. Tuomi, M. Taskinen,
R. Rantamäki, A. Danilewsky and B. Schropp, MRS Spring Meeting, San Francisco,
U.S.A., 31 March- 4 April, 1997.
o "Defects in GaAs crystals
analysed by synchrotron x-ray topography", A.N. Danilewsky, A. Cröll, B.
Schropp, T. Tuomi, M. Taskinen, R. Rantamäki, E. Prieur, P.J. McNally and J.
Curley, Annual Meeting of German Association of Crystallography -DGK, Hamburg,
Germany, 10 March, 1997.
o "Defect recognition in natural
minerals by synchrotron x-ray topography using conventional thin sections",
A.N. Danilewsky, B. Schropp, S. Kek, P.M. Sachs, T. Tuomi, M. Taskinen, R.
Rantamäki, P.J. McNally and J. Curley, Annual Meeting of German Association of
Crystallography -DGK, Hamburg, Germany, 10 March, 1997.
o "Stress effects in GaAs/AlGaAs
heterojunction bipolar transistors", O. Bajdechi and P.J. McNally,
International Semiconductor Conference (CAS), Sinaia, Romania, 9-12 October,
1996.
o "Stress behaviour of reactively
sputtered nitrogenated carbon films", J. Gilvarry, A.K.M.S. Chowdhury, M.
Monclus, D.C. Cameron, P.J. McNally and T. Tuomi, 5th Int. Conf. on Plasma
Surface Engineering, Garmisch-Partenkirchen, Germany, 9-13 September, 1996.
o "Effects of Au overlayers on
the electrical and morphological characteristics of Pd/Sn Ohmic contacts to
n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert,
International Conference on Metallurgical Coatings and Thin Films (ICMCTF
1996), San Diego, U.S.A., 22-26 April, 1996.
o "Synchrotron X-ray topographic
study of Si wafers and device structures for advanced 0.25mm and 0.35mm CMOS technology", P.J. McNally, A.
Reader, T. Tuomi and P.A.F. Herbert, 3rd European Symposium on X-Ray Topography
and High Resolution Diffraction (X-TOP '96), Palermo, Italy, 22-24 April, 1996.
o "Comparison of Pd/Sn and Pd/Sn/Au
thin-film systems for device metallization", M.S. Islam, P.J. McNally,
D.C. Cameron and P.A.F. Herbert, MRS Spring Meeting, San Francisco, U.S.A.,
8-12 April, 1996.
o "Synchrotron X-ray topography
study of Si wafers for advanced 0.25mm CMOS technology", P.J. McNally, T. Tuomi, M. Taskinen, A.N.
Danilewsky, P.A.F. Herbert and A. Reader, HASYLAB Users' Meeting, Hamburger
Synchrotronstrahlungslabor, Hamburg, Germany, 26 January, 1996.
o "Synchrotron X-ray topography
study of Si wafers and device structures for advanced 0.25mm and 0.35mm CMOS technology", P.J. McNally, A.
Reader, T. Tuomi and P.A.F. Herbert, 2nd EU ESPRIT SHAPE Characterisation
Workshop, CNET, Grenoble, France, 10-11 January, 1996.
o "Characterization of Pd/Sn
Ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS",
M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert, Proc. IEEE 1995
Workshop on High Performance Electron Devices for Microwave &
Optoelectronic Applications (EDMO), pp. 26-31, King's College , London, U.K., 27
November, 1995.
o "A novel Pd-based Ohmic contact
system for n-type GaAs: a structural, morphological and electrical
investigation", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F. Herbert,
6th European Conference on Applications of Surface and Interface Analysis
(ECASIA '95), Montreux, Switzerland, 9-13 October, 1995, eds. H.J. Mathieu, B.
Reihl and D. Briggs, pp.299-302, Wiley, 1996.
o "Properties of Pd/Sn Ohmic
contacts to n-GaAs", M.S. Islam, P.J. McNally, D.C. Cameron and P.A.F.
Herbert, Proceedings of the International Conference on Advances in Materials
and Processing Technologies (AMPT '95), Dublin, Ireland, DCU Press, Vol. 1, pp.
40-49, 8-12 August, 1995.
o "Palladium-based Ohmic contacts
to n-type GaAs - a review of recent advances", M.S. Islam, P.J. McNally
and D.C. Cameron, Proceedings of the International Conference on Advances in
Materials and Processing Technologies (AMPT '95), Dublin, Ireland, DCU Press,
Vol. 1, pp. 18-30, 8-12 August, 1995.
o "GaAs electron mobility
models", A. Baric and P. McNally, MIPRO, Opatija, Croatia, 23-26 May,
1995.
o "Non-destructive
characterisation of microelectronic fabrication by synchrotron x-ray
topography", P.J. McNally, P.A.F. Herbert, T. Tuomi, P. Ayras, M.
Karilahti and M. Tromby, Hamburger Synchrotronstrahlungslabor HASYLAB User's
Meeting, Deutsches Elektronen-Synchrotron DESY, 27 January, Hamburg, Germany,
1995.
o "Modelling the effects of
piezoelectrically active defects and their impact on the threshold voltage of
GaAs MESFETs", P.J. McNally, A. Baric and J.K McCaffrey, 2nd Int. Workshop
on Expert Evaluation and Control of Compound Semiconductor Materials and
Technologies (EXMATEC '94), May 18-20, Parma, Italy, 1994.
o "Competing Processes - a path
to damage free plasma etching?", P.A.F. Herbert and P.J. McNally, 5th
Annual Conference of the Irish Plasma & Beam Processing Group, Univ. of
Ulster, Jordanstown, N. Ireland, 30-31 March, 1994.
o "Piezoelectrically active
defects and their impact on the performance of GaAs MESFETs", P.J.
McNally, J.K. McCaffrey and A. Baric, Proc. of the International Conference on
Advances in Materials and Processing Technologies (AMPT '93), August 24-27,
Dublin City University, Dublin, Ireland, DCU Press, pp. 981-992, 1993.
o "Modelling and experimental
analysis of the impact of process induced stress on the electrical performance
of GaAs MESFETs", P.J. McNally, J.J. Rosenberg, T.N. Jackson and J.C.
Ramirez, Annual Meeting, Irish Optoelectronics Group, April 23-25, University
College, Dublin, Ireland, 1992.